In this study, the effects of back-gate bias on the subthreshold swing (S) of a tunnel\nfield-effect transistor (TFET) were discussed. The electrostatic characteristics of the back-gated TFET\nwere obtained using technology computer-aided design (TCAD) simulation and were explained\nusing the concepts of turn-on and inversion voltages. As a result, S decreased, when the back-gate\nvoltage increased; this behavior is attributed to the resultant increase in inversion voltage. In addition,\nit was found that the onâ??off current ratio of the TFET increased with a decrease in S due to the\nback-gate voltage.
Loading....